drain current meaning in Chinese
漏电流
漏极电流
Examples
- In addition , we fabricated mesfet devices on lec si - gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm , saturated drain current and threshold voltage
并以lecsi - gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。 - The study shows that interface state charges not only increase the threshold voltage , but also lower the mosfet transconductance , drain current and field - effect mobility , which can well explain the results of experiment
分析结果显示界面态电荷不仅使阈值电压增大，而且还会导致器件漏电流减小，跨导和场效应迁移率降低，模拟结果能对实验现象做出很好的解释。 - We probed into the most source - drain resistance and its temperature behavior particularly . the result of calculation indicated that the attenuation of source - drain current caused by the source - drain resistance increased when temperature increased
对寄生的漏源串联电阻及其温度特性进行了详细探讨，计算结果表明，漏源串联电阻给漏源电流造成的衰减在温度升高后变得很大。 - The effect of interface state charges on the threshold voltage , drain current , transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution
建立界面态密度的指数分布模型，用数值方法较为详细的分析了界面态电荷对n沟mosfet器件阈值，漏电流，跨导和场效应迁移率的影响。 - We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current , gave a expressions for studying the temperature characteristic of source - drain current , and deduced a ztc point expression
研究了沟长调制效应和漏致势垒降低效应对漏源电流温度特性的影响，给出了一个用于研究漏源电流温度特性的电流公式；并推导了短沟道most的ztc点公式。